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19-4371; Rev 0; 11/08
ATION
EVALU
AVAIL
KIT
ABLE
Dual RF LDMOS Bias Controller with
Nonvolatile Memory
General Description
The MAX11008 controller biases RF LDMOS power
devices found in cellular base stations and other wire-
less infrastructure equipment. Each controller includes
a high-side current-sense amplifier with programmable
gains of 2, 10, and 25 to monitor the LDMOS drain cur-
rent over a range of 20mA to 5A. The MAX11008 sup-
ports up to two external diode-connected transistors to
monitor the LDMOS temperatures while an internal tem-
perature sensor measures the local die temperature. A
12-bit successive-approximation register (SAR) analog-
to-digital converter (ADC) converts the analog signals
from the programmable-gain amplifiers (PGAs), exter-
nal temperature sensors, internal temperature measure-
ment, and two additional auxiliary inputs. The
MAX11008 automatically adjusts the LDMOS bias volt-
ages by applying temperature, AIN, and/or drain cur-
rent samples to data stored in lookup tables (LUTs).
The MAX11008 includes two gate-drive channels, each
consisting of a 12-bit DAC to generate the positive gate
voltage for biasing the LDMOS devices. Each gate-
drive output supplies up to ±2mA of gate current. The
gate-drive amplifier is current-limited to ±25mA and
features a fast clamp to AGND.
The MAX11008 contains 4Kb of on-chip, nonvolatile
EEPROM organized as 256 bits x 16 bits to store LUTs
and register information. The device operates from
either a 4-wire 16MHz SPI?-/MICROWIRE?-compati-
ble or an I 2 C-compatible serial interface.
The MAX11008 operates from a +4.75V to +5.25V ana-
log supply with a typical supply current of 2mA, and a
+2.7V to +5.25V digital supply with a typical supply of
3mA. The device is packaged in a 48-pin, 7mm x 7mm,
thin QFN package and operates over the extended
(-40°C to +85°C) temperature range.
Applications
Features
? On-Chip 4Kb EEPROM for Storing LDMOS Bias
Characteristics
? Integrated High-Side Current-Sense PGA with
Gain of 2, 10, or 25
? ±0.75% Accuracy for Sense Voltage Between
+75mV and +1250mV
? Full-Scale Sense Voltage
+100mV with a Gain of 25
+250mV with a Gain of 10
+1250mV with a Gain of 2
? Common-Mode Range, LDMOS Drain Voltage:
+5V to +32V
? Adjustable Low-Noise 0 to AV DD Output Gate
Bias Voltage Range
? Fast Clamp to AGND for LDMOS Protection
? 12-Bit DAC Control of Gate with Temperature
? Internal Die Temperature Measurement
? 2-Channel External Temperature Measurement
through Remote Diodes
? Internal 12-Bit ADC Measurement for
Temperature, Current, and Voltage Monitoring
? User-Selectable Serial Interface
400kHz/1.7MHz/3.4MHz I 2 C-Compatible Interface
16MHz SPI-/MICROWIRE-Compatible Interface
Ordering Information
Cellular Base Stations
Microwave Radio Links
Feed-Forward Power Amps
PART
MAX11008BETM+
PIN-PACKAGE
48 TQFN-EP*
TEMP
ERROR (°C)
±3
Transmitters
Industrial Process Control
+Denotes a lead-free/RoHS-compliant package.
*EP = Exposed pad.
Note: The device is specified over the -40°C to +85°C operating
temperature range.
SPI is a trademark of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
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